近日，北京大学卢晓波团队报道了扭转菱面体石墨烯中的分数高陈数绝缘体。相关论文发表在2026年7月15日出版的《自然》杂志上。

实现分数陈绝缘体为在无磁场条件下探索分数电荷激发和任意子统计开辟了可能性。一个核心问题是，基于晶格的体系能否产生与传统分数量子霍尔系统中截然不同的全新物态。

研究组分析了一类由伯纳尔双层石墨烯和菱面体四层石墨烯构成的莫尔平带系统。结果发现，在莫尔填充因子v=1和v≈3附近，存在前所未有的丰富量子反常霍尔绝缘体，其陈数从|C|=1到|C|=7。尤其值得注意的是，研究组在v≈2/3附近观测到一个陈数C=7/3的奇异分数陈绝缘体，该态超越了所有已知的、由Jain序列或当前高陈数理论所描述的分数陈绝缘体。该工作拓展了对分数电荷激发的理解，超越了朗道能级框架，并为探索任意子提供了一个莫尔平台。

附：英文原文

Title: Fractional high-Chern insulator in twisted rhombohedral graphene

Author: Li, Zexu, Wang, Wenxuan, Wang, Fajie, Zhang, Zaizhe, Yang, Qiu, Watanabe, Kenji, Taniguchi, Takashi, Xie, X. C., Wang, Jie, Liu, Kaihui, Song, Zhida, Lu, Xiaobo

Issue&Volume: 2026-07-15

Abstract: The realization of fractional Chern insulators opens the possibility of exploring fractionally charged excitations1,2,3,4,5,6,7 and anyonic statistics8,9,10,11 in the absence of a magnetic field. A central question is whether lattice-based systems can give rise to radically new states, distinct from those observed in traditional fractional quantum Hall systems12,13,14,15,16,17,18,19,20. Here we investigate a type of moiré flat-band system composed of Bernal bilayer graphene and rhombohedral tetralayer graphene. We discover an unprecedented richness of quantum anomalous Hall insulators with Chern numbers from |C|=1 to |C|=7 at a moiré filling factor v=1 and around v=3. Remarkably, we observe an exotic fractional Chern insulator with C=7/3 around v=2/3, which is beyond all known fractional Chern insulators described by either the Jain sequence or current high-Chern theory21,22,23,24,25,26,27. Our work expands the understanding of fractionally charged excitations beyond the Landau-level basis and offers a moiré platform for exploring anyons.

DOI: 10.1038/s41586-026-10762-7

Source: https://www.nature.com/articles/s41586-026-10762-7

期刊信息

Nature：《自然》，创刊于1869年。隶属于施普林格·自然出版集团，最新IF：69.504

官方网址：http://www.nature.com/

投稿链接：http://www.nature.com/authors/submit_manuscript.html